Masaharu Kobayashi (M’09) received the B.S. and M.S. degrees in electronics engineering from the University of Tokyo, Tokyo, Japan, in 2004 and 2006, and the Ph.D. degree in electronics engineering from Stanford University, Stanford, CA, in 2010, respectively. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of the Japan Society of Applied Physics. He serves on the Program Committee of Symposia on VLSI Technology Symposium during 2015-2016. He serves on the Program Committee of International Conference on Solid State Devices and Materials during 2015-2016.